Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature

Abstract

Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS$_2$) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS$_2$ transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding $10^{5}$. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.

Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.