Layer-by-layer growth of highly aligned MoS$_2$ nanoribbon arrays

Abstract

One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD) approach for layer-by-layer growth of MoS$_2$ NRs on a low-symmetry sapphire surface. This approach enables the oriented growth of single-crystalline bilayer NRs with a 2H stacking configuration, while maintaining widths below 20 nm. Increasing the MoO$_3$ precursor supply was found to be crucial for promoting the growth of the second and subsequent layers. By controlling the growth time and precursor supply, the layer number of MoS$_2$ NRs can be increased up to four layers. This method can also be extended to the growth of vertical MoS$_2$/WS$_2$ hetero-NRs. The average carrier mobility and current density of bilayer NR field-effect transistors (FETs) are two- and three-times higher than those of monolayer counterparts, respectively, and a maximum mobility of 86.7 cm$^2$V$^{-1}$s$^{-1}$ was attained with a bilayer NR-FET. These results highlight layer number as a key parameter for optimizing NR device performance. Our thickness-controlled growth strategy provides a general route towards TMD NR-based transistors with enhanced scalability and performance.

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