Highly Stable, Dual-Gated MoS 2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
Gwan‐Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul‐Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone
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Record
- Archive ID
- doi:10.1021/acsnano.5b01341
- Published
- Jun 17, 2015
- Venue
- ACS Nano
- DOI
- 10.1021/acsnano.5b01341
- PubMed
- 26083310
- Categories
- 2D Materials and Applications
- Provenance
- openalex